类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 4.7A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 2.5V, 4.5V |
rds on (max) @ id, vgs: | 60mOhm @ 4.7A, 4.5V |
vgs(th) (最大值) @ id: | 1.4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 9 nC @ 4.5 V |
vgs (最大值): | ±12V |
输入电容 (ciss) (max) @ vds: | 640 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 2W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-26 |
包/箱: | SOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PHD108NQ03LT,118Rochester Electronics |
MOSFET N-CH 25V 75A DPAK |
|
GAN063-650WSAQNexperia |
GANFET N-CH 650V 34.5A TO247-3 |
|
NTGS3441PT1GRochester Electronics |
MOSFET P-CH 20V 1.8A 6TSOP |
|
IPL60R075CFD7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 33A 4VSON |
|
STF5N52K3STMicroelectronics |
MOSFET N-CH 525V 4.4A TO220FP |
|
HUF75939P3Rochester Electronics |
MOSFET N-CH 200V 22A TO220-3 |
|
PMF87EN,115Rochester Electronics |
MOSFET N-CH 30V 1.7A SOT323-3 |
|
FL5252050RPanasonic |
MOSFET P-CH 20V 2.1A MINI5-G3-B |
|
SSU2N60BTURochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDMC3612Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 3.3A/16A 8MLP |
|
TPN8R903NL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 20A 8TSON |
|
NVTFS5C478NLWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 40V 26A 8WDFN |
|
BSC100N03MSGRochester Electronics |
N-CHANNEL POWER MOSFET |