English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | U-MOSVIII-H |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 20A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 8.9mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 2.3V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 9.8 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 820 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 700mW (Ta), 22W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-TSON Advance (3.3x3.3) |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NVTFS5C478NLWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 40V 26A 8WDFN |
|
BSC100N03MSGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDN86246Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 1.6A SUPERSOT3 |
|
BUK9840-55115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
AO4404BAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 8.5A 8SOIC |
|
IPA60R360CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 5A TO220 |
|
SPW24N60CFDFKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 21.7A TO247-3 |
|
TSM9ND50CITSC (Taiwan Semiconductor) |
MOSFET N-CH 500V 9A ITO220 |
|
IRFPC50APBFVishay / Siliconix |
MOSFET N-CH 600V 11A TO247-3 |
|
IXFA56N30X3Wickmann / Littelfuse |
MOSFET N-CH 300V 56A TO263AA |
|
IPD060N03LGRochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
STP6N80K5STMicroelectronics |
MOSFET N-CH 800V 4.5A TO220 |
|
IPW65R035CFD7AXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 63A TO247-3-41 |
