类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 250 V |
电流 - 连续漏极 (id) @ 25°c: | 29A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 64mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1584 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 150W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-DFN (5x6) |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SCTH100N65G2-7AGSTMicroelectronics |
SICFET N-CH 650V 95A H2PAK-7 |
|
SI8406DB-T2-E1Vishay / Siliconix |
MOSFET N-CH 20V 16A 6MICRO FOOT |
|
NTMS4704NR2GRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IRFH8316TRPBF-IRRochester Electronics |
IRFH8316 - HEXFET POWER MOSFET |
|
PMV100ENEARRochester Electronics |
30 V, N-CHANNEL TRENCH MOSFET |
|
BSZ039N06NSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 18A/40A TSDSON |
|
BUK9Y22-30B,115Nexperia |
MOSFET N-CH 30V 37.7A LFPAK56 |
|
IRF6636TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 18A DIRECTFET |
|
STP360N4F6STMicroelectronics |
MOSFET N-CH 40V 120A TO220 |
|
AOD409Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 60V 26A TO252 |
|
SI7153DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 18A PPAK1212-8 |
|
2SK3814-AZRochester Electronics |
MOSFET N-CH 60V 60A TO251 |
|
IPD70N04S307ATMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |