类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 3A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 72mOhm @ 3A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 5.5 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 160 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 460mW (Ta), 4.5W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-236AB |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSZ039N06NSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 18A/40A TSDSON |
|
BUK9Y22-30B,115Nexperia |
MOSFET N-CH 30V 37.7A LFPAK56 |
|
IRF6636TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 18A DIRECTFET |
|
STP360N4F6STMicroelectronics |
MOSFET N-CH 40V 120A TO220 |
|
AOD409Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 60V 26A TO252 |
|
SI7153DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 18A PPAK1212-8 |
|
2SK3814-AZRochester Electronics |
MOSFET N-CH 60V 60A TO251 |
|
IPD70N04S307ATMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
TK46A08N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 80V 46A TO220SIS |
|
SPB03N60C3E3045Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
R6020KNZ4C13ROHM Semiconductor |
MOSFET N-CH 600V 20A TO247 |
|
BSC0901NSIATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 28A/100A TDSON |
|
IPN70R2K0P7SATMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 3A SOT223 |