English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 26A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 40mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 54 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3600 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 60W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252, (D-Pak) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI7153DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 18A PPAK1212-8 |
|
2SK3814-AZRochester Electronics |
MOSFET N-CH 60V 60A TO251 |
|
IPD70N04S307ATMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
TK46A08N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 80V 46A TO220SIS |
|
SPB03N60C3E3045Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
R6020KNZ4C13ROHM Semiconductor |
MOSFET N-CH 600V 20A TO247 |
|
BSC0901NSIATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 28A/100A TDSON |
|
IPN70R2K0P7SATMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 3A SOT223 |
|
APTM120DA30CT1GRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 31A SP1 |
|
BSP89H6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 240V 350MA SOT223-4 |
|
IXFY30N25X3Wickmann / Littelfuse |
MOSFET N-CH 250V 30A TO252AA |
|
DMNH4011SPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V PWRDI5060 |
|
STL35N15F3STMicroelectronics |
MOSFET N-CH 150V 33A POWERFLAT |
