类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 1.9A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 215mOhm @ 1.8A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 358 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 1.4W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23 |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMP3007SFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 70A POWERDI3333 |
|
PMPB20XPEAXNexperia |
MOSFET P-CH 20V 7.2A DFN2020MD-6 |
|
SCH2825-TL-ERochester Electronics |
MOSFET N-CH 30V 1.6A 6SCH |
|
IPN70R900P7SATMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 6A SOT223 |
|
FCH023N65S3-F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 75A TO247 |
|
NTLTS3107PR2GRochester Electronics |
MOSFET P-CH 20V 5.9A 8DFN |
|
SI7108DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 14A PPAK1212-8 |
|
IPDD60R075CFD7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 40A HDSOP-10 |
|
IRFS4127PBFRochester Electronics |
HEXFET POWER MOSFET |
|
STFI260N6F6STMicroelectronics |
MOSFET N-CH 60V 80A I2PAKFP |
|
IXTB62N50LWickmann / Littelfuse |
MOSFET N-CH 500V 62A PLUS264 |
|
IRF630NSPBFRochester Electronics |
HEXFET POWER MOSFET |
|
IRFR2607ZTRPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 42A DPAK |