English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | DeepGATE™, STripFET™ VI |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3mOhm @ 60A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 183 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 11400 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 41.7W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I2PAKFP (TO-281) |
| 包/箱: | TO-262-3 Full Pack, I²Pak |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXTB62N50LWickmann / Littelfuse |
MOSFET N-CH 500V 62A PLUS264 |
|
IRF630NSPBFRochester Electronics |
HEXFET POWER MOSFET |
|
IRFR2607ZTRPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 42A DPAK |
|
IXTN5N250Wickmann / Littelfuse |
MOSFET N-CH 2500V 5A SOT227B |
|
FDMS8023SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 26A/49A 8PQFN |
|
FDD050N03BRochester Electronics |
MOSFET N-CH 30V 50A DPAK |
|
NTR5105PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 196MA SOT23-3 |
|
BUK6228-55C,118Rochester Electronics |
PFET, 31A I(D), 55V, 0.044OHM, 1 |
|
NTD6N40Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQB5N40TMRochester Electronics |
MOSFET N-CH 400V 4.5A D2PAK |
|
IXTH140N075L2Wickmann / Littelfuse |
MOSFET N-CH 75V 140A TO247 |
|
IPB80N06S2L-11Rochester Electronics |
IPB80N06 - 55V-60V N-CHANNEL AUT |
|
BSB012NE2LXIXUMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 170A 2WDSON |
