English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 250 V |
| 电流 - 连续漏极 (id) @ 25°c: | 50A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 43mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 3800 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 85W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-3P |
| 包/箱: | TO-3P-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDB9403L-F085Rochester Electronics |
MOSFET N-CH 40V 110A D2PAK |
|
TK4R4P06PL,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CHANNEL 60V 58A DPAK |
|
SQD10N30-330H_GE3Vishay / Siliconix |
MOSFET N-CH 300V 10A TO252AA |
|
IPB60R125CPATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 25A TO263-3 |
|
SI7852ADP-T1-E3Vishay / Siliconix |
MOSFET N-CH 80V 30A PPAK SO-8 |
|
IRLR120Vishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
|
IRFR7746PBF-INFRochester Electronics |
MOSFET N-CH 75V 56A DPAK |
|
2SK2515-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFR4105TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 27A DPAK |
|
RM4P20ES6Rectron USA |
MOSFET P-CH 20V 3A/4.1A SOT23-6 |
|
CMS02P06T6-HFComchip Technology |
MOSFET P-CH 60V 2.4A SOT26 |
|
STP9NK70ZSTMicroelectronics |
MOSFET N-CH 700V 7.5A TO220AB |
|
STF46N60M6STMicroelectronics |
MOSFET N-CH 600V 36A TO220FP |
