English
简体中文
FIXED IND 5.6NH 1.5A 55 MOHM SMD
MOSFET N-CH 600V 25A TO263-3
IGBT 650V 116A 455W TO247AD
DIODE GEN PURP 600V 5A D-PAK
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 25A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 125mOhm @ 16A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 1.1mA |
| 栅极电荷 (qg) (max) @ vgs: | 70 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2500 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 208W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TO263-3-2 |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI7852ADP-T1-E3Vishay / Siliconix |
MOSFET N-CH 80V 30A PPAK SO-8 |
|
IRLR120Vishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
|
IRFR7746PBF-INFRochester Electronics |
MOSFET N-CH 75V 56A DPAK |
|
2SK2515-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFR4105TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 27A DPAK |
|
RM4P20ES6Rectron USA |
MOSFET P-CH 20V 3A/4.1A SOT23-6 |
|
CMS02P06T6-HFComchip Technology |
MOSFET P-CH 60V 2.4A SOT26 |
|
STP9NK70ZSTMicroelectronics |
MOSFET N-CH 700V 7.5A TO220AB |
|
STF46N60M6STMicroelectronics |
MOSFET N-CH 600V 36A TO220FP |
|
PSMN8R0-80YLXNexperia |
MOSFET N-CH 80V 100A LFPAK56 |
|
DMN3009SFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 16A PWRDI3333 |
|
BSZ033NE2LS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 18A/40A TSDSON |
|
DMPH1006UPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 80A PWRDI5060-8 |