类型 | 描述 |
---|---|
系列: | π-MOSVII |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 450 V |
电流 - 连续漏极 (id) @ 25°c: | 7.5A (Tc) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | Through Hole |
供应商设备包: | TO-220SIS |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SIHB12N65E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 12A D2PAK |
|
STL18N65M5STMicroelectronics |
MOSFET N-CH 650V 15A POWERFLAT |
|
IXTP1N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 1A TO220AB |
|
MTP20N15EGRochester Electronics |
MOSFET N-CH 150V 20A TO220AB |
|
IPD040N03LGBTMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 90A TO252-31 |
|
TP65H050WSTransphorm |
GANFET N-CH 650V 34A TO247-3 |
|
FQP3P20Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 2.8A TO220-3 |
|
STD95NH02LT4STMicroelectronics |
MOSFET N-CH 24V 80A DPAK |
|
MTM232270LBFPanasonic |
MOSFET N CH 20V 2A SMINI3-G1-B |
|
IRFR7540PBFRochester Electronics |
MOSFET N-CH 60V 90A DPAK |
|
IPW65R080CFDFKSA1IR (Infineon Technologies) |
MOSFET N-CH 700V 43.3A TO247-3 |
|
IRFB3206PBFIR (Infineon Technologies) |
MOSFET N-CH 60V 120A TO220AB |
|
FDP6676SRochester Electronics |
N-CHANNEL POWER MOSFET |