English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Polar™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1000 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 15Ohm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 50µA |
| 栅极电荷 (qg) (max) @ vgs: | 15.5 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 331 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 50W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MTP20N15EGRochester Electronics |
MOSFET N-CH 150V 20A TO220AB |
|
IPD040N03LGBTMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 90A TO252-31 |
|
TP65H050WSTransphorm |
GANFET N-CH 650V 34A TO247-3 |
|
FQP3P20Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 2.8A TO220-3 |
|
STD95NH02LT4STMicroelectronics |
MOSFET N-CH 24V 80A DPAK |
|
MTM232270LBFPanasonic |
MOSFET N CH 20V 2A SMINI3-G1-B |
|
IRFR7540PBFRochester Electronics |
MOSFET N-CH 60V 90A DPAK |
|
IPW65R080CFDFKSA1IR (Infineon Technologies) |
MOSFET N-CH 700V 43.3A TO247-3 |
|
IRFB3206PBFIR (Infineon Technologies) |
MOSFET N-CH 60V 120A TO220AB |
|
FDP6676SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
BFL4001Rochester Electronics |
MOSFET N-CH 900V 4.1A TO220FI |
|
STD5N95K3STMicroelectronics |
MOSFET N-CH 950V 4A DPAK |
|
PMV30XN,215Rochester Electronics |
MOSFET N-CH 20V 3.2A TO236AB |
