English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | Standard, Reverse Polarity |
| 电压 - 直流反向 (vr) (max): | 1400 V |
| 电流 - 平均整流 (io): | 85A |
| 电压 - 正向 (vf) (max) @ if: | 1.1 V @ 85 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 10 µA @ 100 V |
| 电容@vr, f: | - |
| 安装类型: | Chassis, Stud Mount |
| 包/箱: | DO-203AB, DO-5, Stud |
| 供应商设备包: | DO-5 |
| 工作温度 - 结: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
1N4003G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO204AL |
|
VS-18TQ045STRLHM3Vishay General Semiconductor – Diodes Division |
SCHOTTKY - D2PAK |
|
HER304G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 3A DO201AD |
|
AR4PJ-M3/87AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 2A TO277A |
|
NTE5875NTE Electronics, Inc. |
R-200PRV 12A ANODE CASE |
|
BAV101-GS08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 250MA SOD80 |
|
RB162LAM-40TRROHM Semiconductor |
DIODE SCHOTTKY 40V 1A PMDTM |
|
B350A-M3/5ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 3A DO214AC |
|
CDBU0130-HFComchip Technology |
DIODE SCHOTTKY 30V 100MA 0603 |
|
ES1DLHRQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A SUB SMA |
|
S3BBHM4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 3A DO214AA |
|
RS07B-GS18Vishay General Semiconductor – Diodes Division |
DIODE GP 100V 500MA DO219AB |
|
S1MWF-7Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 1KV 1A SOD123F |
