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| 类型 | 描述 |
|---|---|
| 系列: | eGaN® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
| 场效应管特征: | GaNFET (Gallium Nitride) |
| 漏源电压 (vdss): | 60V, 100V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.7A, 500mA |
| rds on (max) @ id, vgs: | 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V |
| vgs(th) (最大值) @ id: | 2.5V @ 100µA, 2.5V @ 20µA |
| 栅极电荷 (qg) (max) @ vgs: | 0.22nC @ 5V, 0.044nC @ 5V |
| 输入电容 (ciss) (max) @ vds: | 22pF @ 30V, 7pF @ 30V |
| 功率 - 最大值: | - |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 9-VFBGA |
| 供应商设备包: | 9-BGA (1.35x1.35) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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