类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3 |
内存大小: | 2Gb (128M x 16) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.425V ~ 1.575V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1041BN-15ZXITRochester Electronics |
SRAM CHIP ASYNC SINGLE 5V 4M BIT |
|
CAT24C128YI-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 128KBIT I2C 8TSSOP |
|
71V416VL10BEGIRochester Electronics |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
CAT93C46YI-TE13Rochester Electronics |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
25AA160B-I/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8DIP |
|
AT27C080-90JURoving Networks / Microchip Technology |
IC EPROM 8MBIT PARALLEL 32PLCC |
|
71V67703S80BQIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
S25FL512SAGMFMR10Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
MT40A256M16LY-062E AIT:F TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
MT25QU01GBBB1EW9-0SIT TRMicron Technology |
IC FLASH 1GBIT SPI 133MHZ 8WPDFN |
|
CY7C1470BV25-167BZXICypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
IS43TR85120BL-125KBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
|
CY7C1425BV18-200BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |