English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 4Mb (256K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 10ns |
| 访问时间: | 10 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-TFBGA |
| 供应商设备包: | 48-CABGA (9x9) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CAT93C46YI-TE13Rochester Electronics |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
25AA160B-I/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8DIP |
|
AT27C080-90JURoving Networks / Microchip Technology |
IC EPROM 8MBIT PARALLEL 32PLCC |
|
71V67703S80BQIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
S25FL512SAGMFMR10Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
MT40A256M16LY-062E AIT:F TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
MT25QU01GBBB1EW9-0SIT TRMicron Technology |
IC FLASH 1GBIT SPI 133MHZ 8WPDFN |
|
CY7C1470BV25-167BZXICypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
IS43TR85120BL-125KBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
|
CY7C1425BV18-200BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
BR24T01NUX-WTRROHM Semiconductor |
IC EEPROM 1KBIT I2C VSON008X2030 |
|
MT29F1T08EEHAFJ4-3T:AMicron Technology |
IC FLASH 1TB PARALLEL 132VBGA |
|
IS37SML01G1-LLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 1GBIT SPI 104MHZ 8WSON |
