类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Not For New Designs |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 700 ps |
电压 - 电源: | 2.3V ~ 2.7V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 66-TSSOP (0.400", 10.16mm Width) |
供应商设备包: | 66-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MR0A08BCMA35Everspin Technologies, Inc. |
IC RAM 1MBIT PARALLEL 48FBGA |
|
CY7C1354CV25-166AXCTCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
RM25C64C-LMAI-TAdesto Technologies |
IC CBRAM 64KBIT SPI 10MHZ 8UDFN |
|
CY7C1462KVE25-167BZICypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
MR25H256MDFREverspin Technologies, Inc. |
IC RAM 256KBIT SPI 40MHZ 8DFN |
|
AT25DL081-MHN-TAdesto Technologies |
IC FLASH 8MBIT SPI 100MHZ 8UDFN |
|
IS45S16160G-7TLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
CY7C2570XV18-600BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
AS4C512M16D3LB-12BCNAlliance Memory, Inc. |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
BR24T512F-3AME2ROHM Semiconductor |
IC EEPROM 512KBIT I2C 1MHZ 8SOP |
|
25AA256-I/MFRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 10MHZ 8DFN |
|
AS4C64M16D2B-25BCNTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
93AA56A-I/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8MSOP |