类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile |
内存大小: | 256Mb (8M x 32) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 6 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 90-TFBGA |
供应商设备包: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25C080T-E/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8SOIC |
|
BR24C01-DS6TPROHM Semiconductor |
IC EEPROM 1KBIT I2C 8TSSOP |
|
BR34L02FV-WE2ROHM Semiconductor |
IC EEPROM 2KBIT I2C 8SSOPB |
|
CY7C131-30NCRochester Electronics |
DUAL-PORT SRAM, 1KX8 |
|
SST39VF402C-70-4C-MAQE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48WFBGA |
|
BR25G320FJ-3GE2ROHM Semiconductor |
IC EEPROM 32KBIT SPI 20MHZ 8SOPJ |
|
BR24C04-RMN6TPROHM Semiconductor |
IC EEPROM 4KBIT I2C 100KHZ 8SO |
|
CY7C1245KV18-400BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
CY62146DV30LL-55ZSXIRochester Electronics |
STANDARD SRAM, 256KX16, 55NS |
|
71V35761SA183BQG8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
IS61NLP102418B-200B3L-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
MT58L64L36DT-10Rochester Electronics |
CACHE SRAM, 64KX36, 5NS PQFP100 |
|
S25FL032P0XBHI020Rochester Electronics |
IC FLASH 32MBIT SPI/QUAD 24BGA |