English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 18Mb (1M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-TBGA |
| 供应商设备包: | 165-TFBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT58L64L36DT-10Rochester Electronics |
CACHE SRAM, 64KX36, 5NS PQFP100 |
|
S25FL032P0XBHI020Rochester Electronics |
IC FLASH 32MBIT SPI/QUAD 24BGA |
|
AT24CS64-SSHM-BRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 1MHZ 8SOIC |
|
93LC66AT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8DFN |
|
S29AL016J70BFN010Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48FBGA |
|
R1LP0108ESN-7SI#S0Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOP |
|
DS2502Rochester Electronics |
IC EPROM 1KBIT 1-WIRE TO92-3 |
|
S25FL128SDSMFN001Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
IS61WV102416FBLL-10BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48TFBGA |
|
W631GG8MB12IWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 78VFBGA |
|
MT57W1MH18JF-4Rochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
IS42S32160F-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 86TSOP II |
|
S29GL256S90FHI013Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
