English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MX29SL |
| 包裹: | Tray |
| 零件状态: | Not For New Designs |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 8Mb (1M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 90ns |
| 访问时间: | 90 ns |
| 电压 - 电源: | 1.65V ~ 2.2V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-WFBGA, CSPBGA |
| 供应商设备包: | 48-WFBGA, CSP (4x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS61WV2568EDBLL-10KLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 36SOJ |
|
71V3577S75BQRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
71V65803S100BGGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
25LC010AT-E/MCRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 10MHZ 8DFN |
|
CYDM128B16-55BVXITRochester Electronics |
IC SRAM 128KBIT PAR 100VFBGA |
|
DS1230YL-100Rochester Electronics |
DS1230 3.3 VOLT, 256 K NV SRAM |
|
CY7C1393JV18-300BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
CY62157DV30LL-55BVXARochester Electronics |
IC SRAM 8MBIT PARALLEL 48VFBGA |
|
MX25U6472FM2I02Macronix |
IC FLASH 64MBIT SPI/QUAD 8SOP |
|
S29GL512S10DHA023Rochester Electronics |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
71V65603S150BGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
93C46BX-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
IS29GL256-70SLETISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 256MBIT PAR 56TSOP I |
