English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Not For New Designs |
| 内存类型: | Volatile |
| 内存格式: | PSRAM |
| 技术: | PSRAM (Pseudo SRAM) |
| 内存大小: | 64Mb (4M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 70 ns |
| 电压 - 电源: | 1.7V ~ 1.95V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 54-VFBGA |
| 供应商设备包: | 54-VFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
R1LP0408CSB-7LC#S0Rochester Electronics |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
IS64WV25616EDBLL-10BLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48TFBGA |
|
MX25L2006EZUK-12GMacronix |
IC FLASH 2MBIT SPI 86MHZ 8USON |
|
CAV24C64WE-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT I2C 8SOIC |
|
IS42S83200G-7BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
CY7C1361S-133AXIRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
93C56BT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ SOT23-6 |
|
UPD46365092BF1-E40Y-EQ1-ARochester Electronics |
QDR SRAM, 4MX9, 0.45NS |
|
34AA02T-E/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
AS4C16M32MD1-5BINTRAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 90FBGA |
|
AT25DF041B-UUN-TAdesto Technologies |
IC FLASH 4MBIT SPI 104MHZ 8WLCSP |
|
S26KL512SDABHB023Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 24FBGA |
|
CY7C2563XV18-600BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
