类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 128Mb (16M x 8) |
内存接口: | Parallel |
时钟频率: | 143 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.4 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS5F12G04SND-10LINAlliance Memory, Inc. |
IC FLASH 2GBIT SPI/QUAD I/O 8LGA |
|
BR25H128F-2CE2ROHM Semiconductor |
IC EEPROM 128KBIT SPI 10MHZ 8SOP |
|
FT24C64A-ENR-TFremont Micro Devices |
IC EEPROM 64KBIT I2C 1MHZ 8DFN |
|
70T633S10BFIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
GS8662R18BGD-350IGSI Technology |
IC SRAM 72MBIT PARALLEL 165FPBGA |
|
71T75802S100BG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
R1LV5256ESP-5SI#B1Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOP |
|
7164L20YGRochester Electronics |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
BQ2026LPRRochester Electronics |
IC EPROM 1.5KBIT SGL WIRE TO92-3 |
|
47L04T-E/SNRoving Networks / Microchip Technology |
IC EERAM 4KBIT I2C 1MHZ 8SOIC |
|
71V124SA15YGI8Rochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
AT45DB041E-SSHN2B-TAdesto Technologies |
IC FLASH 4MBIT SPI 85MHZ 8SOIC |
|
CY7C1399B-10ZCRochester Electronics |
CACHE SRAM, 32KX8, 10NS PDSO28 |