English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 64Kb (8K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 20ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 28-BSOJ (0.300", 7.62mm Width) |
| 供应商设备包: | 28-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BQ2026LPRRochester Electronics |
IC EPROM 1.5KBIT SGL WIRE TO92-3 |
|
47L04T-E/SNRoving Networks / Microchip Technology |
IC EERAM 4KBIT I2C 1MHZ 8SOIC |
|
71V124SA15YGI8Rochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
AT45DB041E-SSHN2B-TAdesto Technologies |
IC FLASH 4MBIT SPI 85MHZ 8SOIC |
|
CY7C1399B-10ZCRochester Electronics |
CACHE SRAM, 32KX8, 10NS PDSO28 |
|
CY7C1248KV18-400BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
IS45S16160G-7TLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
CY7C1512V18-200BZIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
70T3589S200BC8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 256CABGA |
|
S25FL128SDSMFV003Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
S25FL064LABNFV040Rochester Electronics |
SERIAL FLASH, 64MB |
|
UPD44324362BF5-E33-FQ1-ARochester Electronics |
DDR SRAM, 1MX36, 0.45NS |
|
93AA46CT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8MSOP |
