English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 72Mb (4M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.1 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-LQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
11LC040-I/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SGL WIRE 8MSOP |
|
TC58BVG1S3HBAI4Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 2GBIT 63TFBGA |
|
MT25QL01GBBB8ESF-0AATMicron Technology |
IC FLASH 1GBIT SPI 133MHZ 16SO |
|
S29GL512S10GHI010Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56FBGA |
|
6116LA35DBRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24CDIP |
|
M95160-RMC6TGSTMicroelectronics |
IC EEPROM 16KBIT SPI 8UFDFPN |
|
EDB5432BEBH-1DAUT-F-DMicron Technology |
IC DRAM 512MBIT PAR 134VFBGA |
|
S25FL129P0XMFV003Rochester Electronics |
FLASH, 16MX8, PDSO16 |
|
CY7C1356C-250AXCCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CY7C1021V33-15VCRochester Electronics |
STANDARD SRAM, 64KX16, 15NS |
|
S29GL256S90FHSS23Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
25LC080CT-H/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 5MHZ 8SOIC |
|
34AA04T-E/MUYRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8UDFN |
