English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | PSRAM |
| 技术: | PSRAM (Pseudo SRAM) |
| 内存大小: | 128Mb (8M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 70 ns |
| 电压 - 电源: | 1.7V ~ 1.95V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 54-VFBGA |
| 供应商设备包: | 54-VFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1049CV33-8ZSXCRochester Electronics |
STANDARD SRAM |
|
25LC160A-I/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |
|
AT24C16A-10TQ-2.7Rochester Electronics |
IC EEPROM 16KBIT I2C 8TSSOP |
|
CY62126DV30LL-55BVXIRochester Electronics |
STANDARD SRAM, 64KX16, 55NS |
|
AT28LV010-20JU-319Roving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32PLCC |
|
CY14B104L-ZS25XIRochester Electronics |
IC NVSRAM 4MBIT PAR 44TSOP II |
|
IS43LR16640A-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
|
CY62147DV30L-55ZSXIRochester Electronics |
STANDARD SRAM, 256KX16, 55NS |
|
CY7C1413KV18-250BZCRochester Electronics |
QDR SRAM, 2MX18, 0.45NS, CMOS, P |
|
DS28E07+TMaxim Integrated |
IC EEPROM 1KBIT 1-WIRE TO92-3 |
|
24LC04-I/SLRochester Electronics |
4K-BIT (2X256X8) SERIAL EEPROM, |
|
25LC040AT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI SOT23-6 |
|
NV25020DWHFT3GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 2KBIT SPI 10MHZ 8SOIC |
