类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 64Mb (8M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 120 MHz |
写周期时间 - 字,页: | 50µs, 2.4ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-WDFN Exposed Pad |
供应商设备包: | 8-WSON (5x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S29AS016J70BHI042Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48FBGA |
|
W631GG8MB12I TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 78VFBGA |
|
MX29SL800CTXEI-90GMacronix |
IC FLASH 8MBIT PARALLEL 48LFBGA |
|
IS49RL36160-093EBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 168FCBGA |
|
S29GL064N90DFI010Flip Electronics |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
NMC27C256BN150Rochester Electronics |
OTP ROM, 32KX8, 150NS PDIP28 |
|
W988D2FBJX7E TRWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
BR25S128GUZ-WE2ROHM Semiconductor |
IC EEPROM 128K SPI VCSP35L2 |
|
IS46R16320D-6TLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
CY7C144E-15AXIFlip Electronics |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
CY7C09289V-9AXIFlip Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
CAV24C08WE-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 8KBIT I2C 400KHZ 8SOIC |
|
MT29F4G08ABADAWP-AATX:DMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP I |