类型 | 描述 |
---|---|
系列: | Benand™ |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND (SLC) |
内存大小: | 4Gb (512M x 8) |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | 25ns |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 63-VFBGA |
供应商设备包: | 63-TFBGA (9x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24AA64T-E/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8TSSOP |
|
CYD04S72V-133BBIRochester Electronics |
IC SRAM 4MBIT PARALLEL 484FBGA |
|
AS7C34096A-8TINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
AT45DB081E-SHN-TAdesto Technologies |
IC FLASH 8MBIT SPI 85MHZ 8SOIC |
|
IS61WV5128BLL-10BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 36TFBGA |
|
W631GU6MB15I TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96VFBGA |
|
CY7C14141KV18-250BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
AS4C64M16D3LB-12BANTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
MT58L256L36PS-7.5Rochester Electronics |
CACHE SRAM, 256KX36, 4NS PQFP100 |
|
CY27C256A-70PIRochester Electronics |
OTP ROM, 32KX8, 70NS PDIP28 |
|
93LC76BT-E/OTRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ SOT23-6 |
|
IS61WV10248BLL-10MLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48MINIBGA |
|
CY7C1372SV25-167AXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 100TQFP |