类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 8Kb (512 x 16) |
内存接口: | SPI |
时钟频率: | 3 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | SOT-23-6 |
供应商设备包: | SOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61WV10248BLL-10MLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48MINIBGA |
|
CY7C1372SV25-167AXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IS42SM16400M-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 54TFBGA |
|
CAT24C08YI-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 8KBIT I2C 8TSSOP |
|
CY7C1384D-166AXIRochester Electronics |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
CY2147-55DCRochester Electronics |
STANDARD SRAM, 4KX1, 55NS |
|
AS4C32M16MD1A-5BCNTRAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
S29JL064J60TFA003Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
CY7C1041BV33L-15ZCRochester Electronics |
STANDARD SRAM, 256KX16, 15NS |
|
AS7C31024B-15TJCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
S34MS02G104BHI010Cypress Semiconductor |
IC FLASH 2GBIT PARALLEL 63BGA |
|
CY7C1356A-166ACRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CY7C11501KV18-400BZXIRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |