English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MXSMIO™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Not For New Designs |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 2Mb (256K x 8) |
| 内存接口: | SPI - Quad I/O |
| 时钟频率: | 33 MHz |
| 写周期时间 - 字，页: | 100µs, 10ms |
| 访问时间: | - |
| 电压 - 电源: | 1.65V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
| 供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS61WV102416BLL-10MLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PAR 48MINIBGA |
|
AT25SF161-SSHD-BAdesto Technologies |
IC FLASH 16MBIT SPI 104MHZ 8SOIC |
|
NV24C16UVLT2GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT I2C 1MHZ US8 |
|
CY7C1019CV33-12VIRochester Electronics |
STANDARD SRAM, 128KX8 |
|
CY7C09389V-7ACRochester Electronics |
DUAL-PORT SRAM, 64KX18, 7.5NS |
|
MT54W1MH18JF-4Rochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
IS61WV20488BLL-10MLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PAR 48MINIBGA |
|
BR24L01AFVJ-WE2ROHM Semiconductor |
IC EEPROM 1KBIT I2C 8TSSOP |
|
MT54W2MH8JF-6Rochester Electronics |
IC SRAM 16MBIT PARALLEL 165FBGA |
|
LE24LB642CSTL-TFM-HRochester Electronics |
TWO WIRE SERIAL INTERFACE EEPROM |
|
S29GL512S11FHI020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64BGA |
|
24AA025E64T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
IS46DR16320E-3DBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
