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FIXED IND 11NH 130MA 1.7 OHM SMD
FIXED IND 5.6MH 1.3A 1.6 OHM TH
DUAL-PORT SRAM, 64KX18, 7.5NS
TOFINOXE-0200T1M2EDDY90001TATXX.
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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Synchronous |
| 内存大小: | 1.152Mb (64K x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 83 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 7.5 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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