类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | RAM |
技术: | MRAM (Magnetoresistive RAM) |
内存大小: | 8Mb (512K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 35 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 54-TSOP2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY14B101K-SP35XIRochester Electronics |
IC NVSRAM 1MBIT PARALLEL 48SSOP |
|
FM28V020-T28GRochester Electronics |
IC FRAM 256KBIT PAR 28TSOP I |
|
IS42RM16800H-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
34AA02-I/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
MT28F010-20/BRochester Electronics |
MEMORY IC |
|
MX25R512FBFIL0Macronix |
IC FLASH 512KBIT SPI/QUAD 8WLCSP |
|
DS1221S/T&RRochester Electronics |
NONVOLATILE MEMORY POWER MANAGEM |
|
CY7C1520KV18-333BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CY7C182-35VCRochester Electronics |
CACHE SRAM, 8KX9, 35NS PDSO28 |
|
24LC02BT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C SOT23-5 |
|
IS43DR16320D-3DBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
0418A1ACLAA-50Rochester Electronics |
4MBIT (256K X 18) SRAM |
|
93C66CT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8MSOP |