English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 2Kb (256 x 8) |
| 内存接口: | I²C |
| 时钟频率: | 400 kHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 900 ns |
| 电压 - 电源: | 2.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | SC-74A, SOT-753 |
| 供应商设备包: | SOT-23-5 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS43DR16320D-3DBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
0418A1ACLAA-50Rochester Electronics |
4MBIT (256K X 18) SRAM |
|
93C66CT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8MSOP |
|
CY7C1079DV33-12BAXITCypress Semiconductor |
IC SRAM 32MBIT PARALLEL 48FBGA |
|
AF064GEC5A-2001EXATP Electronics, Inc. |
IC 64GBIT 153BGA |
|
CY7C1270XV18-633BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
AS4C8M16SA-6BINAlliance Memory, Inc. |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
IS62WV12816EALL-55TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
IS43R86400D-5TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
IS64WV5128EDBLL-10BLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 36TFBGA |
|
23LC1024-I/PRoving Networks / Microchip Technology |
IC SRAM 1MBIT SPI/QUAD I/O 8DIP |
|
CY7C195-25VCRochester Electronics |
STANDARD SRAM, 64KX4, 25NS |
|
CAT24C02WI-GT3Rochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
