类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Not For New Designs |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR2 |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | 333 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 450 ps |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 84-TFBGA |
供应商设备包: | 84-TWBGA (8x12.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
0418A1ACLAA-50Rochester Electronics |
4MBIT (256K X 18) SRAM |
|
93C66CT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8MSOP |
|
CY7C1079DV33-12BAXITCypress Semiconductor |
IC SRAM 32MBIT PARALLEL 48FBGA |
|
AF064GEC5A-2001EXATP Electronics, Inc. |
IC 64GBIT 153BGA |
|
CY7C1270XV18-633BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
AS4C8M16SA-6BINAlliance Memory, Inc. |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
IS62WV12816EALL-55TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
IS43R86400D-5TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
IS64WV5128EDBLL-10BLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 36TFBGA |
|
23LC1024-I/PRoving Networks / Microchip Technology |
IC SRAM 1MBIT SPI/QUAD I/O 8DIP |
|
CY7C195-25VCRochester Electronics |
STANDARD SRAM, 64KX4, 25NS |
|
CAT24C02WI-GT3Rochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
AS6C4008A-55STINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 32STSOP |