类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM |
内存大小: | 1Mb (128K x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 20 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C195-25VCRochester Electronics |
STANDARD SRAM, 64KX4, 25NS |
|
CAT24C02WI-GT3Rochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
AS6C4008A-55STINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 32STSOP |
|
S25FL512SAGMFVG11Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
CY7C1360B-200BZCRochester Electronics |
CACHE SRAM, 256KX36, 3NS |
|
CY7C1399B-20ZCRochester Electronics |
CACHE SRAM, 32KX8, 20NS PDSO28 |
|
25AA080D-I/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8SOIC |
|
CY62256NLL-55SNXIAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOIC |
|
CY7C1648KV18-400BZXCRochester Electronics |
IC SRAM 144MBIT PARALLEL 165FBGA |
|
S29GL512T10TFI020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
IS46TR16128D-125KBLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
CY7C1562XV18-366BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
RMLV0416EGSB-4S2#AA1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP2 |