类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 4Mb (512K x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 104 MHz |
写周期时间 - 字,页: | 800µs |
访问时间: | - |
电压 - 电源: | 2.3V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.209", 5.30mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7142SA35CBRenesas Electronics America |
IC SRAM 16KBIT PARALLEL SB48 |
|
7005S35PFGRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
S29GL512S11TFIV10Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
IS43TR16128A-15HBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
FM1608B-SGRochester Electronics |
IC FRAM 64KBIT PARALLEL 28SOIC |
|
AT25SF081B-SHD-BAdesto Technologies |
IC FLASH 8MBIT SPI QUAD 8SOIC |
|
M24C32T-FCU6T/TFSTMicroelectronics |
IC EEPROM 32KBIT I2C 1MHZ 4WLCSP |
|
S29GL512P10FFCR20Rochester Electronics |
FLASH, 512MX1, 100NS, PBGA64 |
|
UPD46365362BF1-E40Y-EQ1-ARochester Electronics |
QDR SRAM, 1MX36, 0.45NS |
|
24AA01/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
MT29F128G08CBECBH6-12M:C TRMicron Technology |
IC FLASH 128GBIT PAR 152VBGA |
|
CY7C024BV-15AXIRochester Electronics |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
GS8342Q18BGD-357IGSI Technology |
IC SRAM 36MBIT PARALLEL 165FPBGA |