类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Quad Port, Synchronous, QDR IIIe |
内存大小: | 144Mb (4M x 36) |
内存接口: | Parallel |
时钟频率: | 714 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.2V ~ 1.35V |
工作温度: | -40°C ~ 100°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 260-BGA |
供应商设备包: | 260-BGA (22x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24C00T-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 128B I2C 100KHZ 8TDFN |
|
MT53D512M16D1DS-046 WT:D TRMicron Technology |
IC DRAM 8GBIT 2.133GHZ 200WFBGA |
|
SST39VF1602C-70-4I-EKERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
S25FL512SAGBHV213Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
93C46BT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DFN |
|
71321LA25PFGI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
MT53E384M32D2DS-053 AUT:EMicron Technology |
IC DRAM 12GBIT 1.866GHZ 200WFBGA |
|
MT29F2T08EMHAFJ4-3ITFES:AMicron Technology |
IC FLASH 2TB PARALLEL 132VBGA |
|
34AA02-E/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
BQ4014MB-120Rochester Electronics |
IC NVSRAM 2MBIT PAR 32DIP MODULE |
|
CAT24C02VP2E-GT3Rochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8TDFN |
|
24LC025T-I/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
IS43DR86400D-3DBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TWBGA |