类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND (pSLC) |
内存大小: | 64Gb (8G x 8) |
内存接口: | eMMC |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | -25°C ~ 85°C |
安装类型: | Surface Mount |
包/箱: | 153-VFBGA |
供应商设备包: | 153-FBGA (11.5x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25LC020AT-H/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 10MHZ 8SOIC |
|
NDS63PT9-16ITInsignis Technology Corporation |
IC DRAM 64MBIT PAR 86TSOP II |
|
IS45S32400F-7TLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
DS2502P-E64+Maxim Integrated |
IC EPROM 1KBIT 1-WIRE 6TSOC |
|
AT45DB021E-SHN-BAdesto Technologies |
IC FLASH 2MBIT SPI 70MHZ 8SOIC |
|
CY7C1386BV25-150BGCRochester Electronics |
CACHE SRAM, 512KX36, 3.8NS |
|
93C66BT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ SOT23-6 |
|
CDP68HC68R2ERochester Electronics |
STANDARD SRAM, 256X8, CMOS, PDIP |
|
6116SA90DBRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24CDIP |
|
10415FC10Rochester Electronics |
STANDARD SRAM, 1KX1, ECL10K |
|
S29GL128S11DHIV10Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
23A512-E/STRoving Networks / Microchip Technology |
IC SRAM 512KBIT SPI/QUAD 8TSSOP |
|
27C512-25B/UCRochester Electronics |
512K (64K X 8) CMOS EPROM |