类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 150 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.8 ns |
电压 - 电源: | 2.375V ~ 2.625V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
93C66BT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ SOT23-6 |
|
CDP68HC68R2ERochester Electronics |
STANDARD SRAM, 256X8, CMOS, PDIP |
|
6116SA90DBRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24CDIP |
|
10415FC10Rochester Electronics |
STANDARD SRAM, 1KX1, ECL10K |
|
S29GL128S11DHIV10Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
23A512-E/STRoving Networks / Microchip Technology |
IC SRAM 512KBIT SPI/QUAD 8TSSOP |
|
27C512-25B/UCRochester Electronics |
512K (64K X 8) CMOS EPROM |
|
CY7C0830AV-133AIRochester Electronics |
DUAL-PORT SRAM, 64KX18, 4NS |
|
UPD4416016G5-A15-9JF-ARochester Electronics |
STANDARD SRAM, 1MX16, 15NS |
|
CAT24C16WI-GRochester Electronics |
IC EEPROM 16KBIT I2C 8SOIC |
|
CY7C1470BV33-167BZXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CY7C1297H-133AXCRochester Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
BR25L020FVM-WTRROHM Semiconductor |
IC EEPROM 2KBIT SPI 5MHZ 8MSOP |