类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR4 |
内存大小: | 4Gb (256M x 16) |
内存接口: | Parallel |
时钟频率: | 1.6 GHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 19 ns |
电压 - 电源: | 1.14V ~ 1.26V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-FBGA (7.5x13.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
11AA080T-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SGL WIRE 8TDFN |
|
70V3319S133BCRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
CY7C1615KV18-300BZXCRochester Electronics |
SYNC RAM |
|
PC28F128J3F75AAlliance Memory, Inc. |
IC FLASH 128MBIT PAR 64EASYBGA |
|
S25FL256LDPBHN030Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
BR24C16-DW6TPROHM Semiconductor |
IC EEPROM 16KBIT I2C 8TSSOP |
|
AT28C64B-15SURoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
IS42S86400F-7TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
S25FS256SDSBHM203Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
MT29F1T08EEHAFJ4-3R:A TRMicron Technology |
IC FLASH 1TB PARALLEL 132VBGA |
|
CY7C1079DV33-12BAXICypress Semiconductor |
IC SRAM 32MBIT PARALLEL 48FBGA |
|
S34ML16G202TFI200Rochester Electronics |
IC FLSH 16GBIT PARALLEL 48TSOP I |
|
AS4C32M16D2A-25BCNAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 84FBGA |