类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Not For New Designs |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3L |
内存大小: | 1Gb (128M x 8) |
内存接口: | Parallel |
时钟频率: | 933 MHz |
写周期时间 - 字,页: | - |
访问时间: | 20 ns |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 78-VFBGA |
供应商设备包: | 78-VFBGA (10.5x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS46R16320E-5TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
CY7C1399BN-15ZXIRochester Electronics |
IC SRAM 256KBIT PAR 28TSOP I |
|
MX25L8035EM2I-10GMacronix |
IC FLASH 8MBIT SPI 108MHZ 8SOP |
|
11LC040-E/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SGL WIRE 8MSOP |
|
CY62147EV30LL-45ZSXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
S25FL064LABNFV013Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
7027L20PFGI8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
MT25QL128ABA8ESF-0AAT TRMicron Technology |
IC FLASH 128MBIT SPI 133MHZ 16SO |
|
34AA02T-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8TDFN |
|
SST25WF020AT-40I/SNRoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 40MHZ 8SOIC |
|
7142LA35PDGRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 48DIP |
|
71V546S100PFGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
TH58BYG2S3HBAI4Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 4GBIT 63TFBGA |