类型 | 描述 |
---|---|
系列: | Benand™ |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND (SLC) |
内存大小: | 4Gb (512M x 8) |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | -40°C ~ 85°C |
安装类型: | Surface Mount |
包/箱: | 63-VFBGA |
供应商设备包: | 63-TFBGA (9x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1041G30-10BVXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
CY62147GN30-45ZSXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
25AA640X-I/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 1MHZ 8TSSOP |
|
R1EX25016ASA00A#S0Rochester Electronics |
IC EEPROM 16KBIT SPI 5MHZ 8SOP |
|
S70FL01GSAGBHMC10Cypress Semiconductor |
IC FLASH 1GBIT SPI/QUAD 24BGA |
|
GD25Q80CEIGRGigaDevice |
IC FLASH 8MBIT SPI/QUAD 8USON |
|
CAT93C86PRochester Electronics |
IC EEPROM 16KBIT SPI 3MHZ 8DIP |
|
CAT93C66VIRochester Electronics |
CAT93C66 - 4-KBIT MICROWIRE SERI |
|
AS7C34096A-15JCNAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
93LC76CT-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8TDFN |
|
71V35761S183PFGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CY7C1665KV18-550BZXCCypress Semiconductor |
IC SRAM 144MBIT PARALLEL 165FBGA |
|
70V3319S133BC8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |