类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | RAM |
技术: | MRAM (Magnetoresistive RAM) |
内存大小: | 2Mb (128K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 35 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DS1250WP-150Rochester Electronics |
IC NVSRAM 4MBIT PAR 34PWRCAP |
|
CY62148DV30LL-70ZSXARochester Electronics |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
CY7C1440AV33-250AXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
AS8C401801-QC166NAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
IS43R16320D-5BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
S29GL032N90DFBR23Rochester Electronics |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
MT58L256L32FT-8.5ITRochester Electronics |
CACHE SRAM, 256KX32, 8.5NS |
|
AS4C8M32MSA-6BINTRAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 90FBGA |
|
AS4C64M16D3LB-12BCNTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
93LC56BT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ SOT23-6 |
|
IS43R86400D-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
S25FL128SAGMFN003Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
BQ2022DBZRRochester Electronics |
IC EPROM 1KBIT SGL WIRE SOT23-3 |