English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 150ns |
| 访问时间: | 150 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 34-PowerCap™ Module |
| 供应商设备包: | 34-PowerCap Module |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY62148DV30LL-70ZSXARochester Electronics |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
CY7C1440AV33-250AXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
AS8C401801-QC166NAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
IS43R16320D-5BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
S29GL032N90DFBR23Rochester Electronics |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
MT58L256L32FT-8.5ITRochester Electronics |
CACHE SRAM, 256KX32, 8.5NS |
|
AS4C8M32MSA-6BINTRAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 90FBGA |
|
AS4C64M16D3LB-12BCNTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
93LC56BT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ SOT23-6 |
|
IS43R86400D-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
S25FL128SAGMFN003Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
BQ2022DBZRRochester Electronics |
IC EPROM 1KBIT SGL WIRE SOT23-3 |
|
S25FL128SAGMFIG00Rochester Electronics |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
