类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | RAM |
技术: | MRAM (Magnetoresistive RAM) |
内存大小: | 16Mb (2M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 35 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-LFBGA |
供应商设备包: | 48-FBGA (10x10) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NV24C32MUW3VLTBGSanyo Semiconductor/ON Semiconductor |
IC EEPROM 32KBIT I2C 1MHZ 8UDFN |
|
MB85RC64TAPNF-G-BDE1Fujitsu Electronics America, Inc. |
IC FRAM 64KBIT I2C 3.4MHZ 8SOP |
|
CY7C1361C-100AXCTCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
W25Q256JVCIQ TRWinbond Electronics Corporation |
IC FLSH 256MBIT SPI/QUAD 24TFBGA |
|
MT40A256M16LY-062E AAT:F TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
MX25L6436EM2I-10GMacronix |
IC FLASH 64MBIT SPI 104MHZ 8SOP |
|
IS25LP128F-JBLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
CY7C1046CV33-10VCRochester Electronics |
STANDARD SRAM, 1MX4, 10NS |
|
CY62157ESL-45ZSXITRochester Electronics |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
MK22FN1M0AVMC12557Rochester Electronics |
KINETIS K22: 120MHZ CORTEX M4F P |
|
CY62256LL-55ZXIRochester Electronics |
IC SRAM 256KBIT PAR 28TSOP I |
|
AT28HC256E-12JU-TRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
|
MT55L256L18P1T-7.5TRRochester Electronics |
SRAM 3.3V 4M-BIT 256KX18 4.2NS |