类型 | 描述 |
---|---|
系列: | MX25xxx35/36 - MXSMIO™ |
包裹: | Tube |
零件状态: | Not For New Designs |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 64Mb (8M x 8) |
内存接口: | SPI |
时钟频率: | 104 MHz |
写周期时间 - 字,页: | 300µs, 5ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.209", 5.30mm Width) |
供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS25LP128F-JBLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
CY7C1046CV33-10VCRochester Electronics |
STANDARD SRAM, 1MX4, 10NS |
|
CY62157ESL-45ZSXITRochester Electronics |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
MK22FN1M0AVMC12557Rochester Electronics |
KINETIS K22: 120MHZ CORTEX M4F P |
|
CY62256LL-55ZXIRochester Electronics |
IC SRAM 256KBIT PAR 28TSOP I |
|
AT28HC256E-12JU-TRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
|
MT55L256L18P1T-7.5TRRochester Electronics |
SRAM 3.3V 4M-BIT 256KX18 4.2NS |
|
S29GL01GP11FAIR20Flip Electronics |
IC FLASH 1GBIT PARALLEL 64BGA |
|
CY7C131-55JIRochester Electronics |
DUAL-PORT SRAM, 1KX8, 55NS |
|
MT28EW128ABA1HJS-0SITMicron Technology |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
AT24CS04-MAHM-TRochester Electronics |
IC EEPROM 4KBIT I2C 1MHZ 8UDFN |
|
93C56CT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8DFN |
|
SST39VF6402B-70-4I-B1KE-TRoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TFBGA |