类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 64Mb (4M x 16) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MX25L12835FM2I-10GMacronix |
IC FLASH 128MBIT SPI 104MHZ 8SOP |
|
S29GL256S10TFV020Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
71256L35YIRochester Electronics |
SRAM 256K (32K X 8-BIT) |
|
FM24C64B-GTRCypress Semiconductor |
IC FRAM 64KBIT I2C 1MHZ 8SOIC |
|
71V632S5PFG8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 100TQFP |
|
IS62WV1288BLL-55TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32TSOP I |
|
SST26VF064B-104V/MNRoving Networks / Microchip Technology |
IC FLASH 64MBIT SPI/QUAD 8WDFN |
|
71V67602S133PFGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IS25LP016D-JLLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
IS46LR16320B-6BLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
BR93G86F-3AGTE2ROHM Semiconductor |
IC EEPROM 16KBIT SPI 3MHZ 8SOP |
|
IS46TR16128CL-125KBLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
11AA040T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SGL WIRE 8SOIC |