类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Not For New Designs |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPSDR |
内存大小: | 128Mb (8M x 16) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 5.4 ns |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -25°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 54-TFBGA |
供应商设备包: | 54-VFBGA (8x9) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24VL024H/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
CY7C1041CV33-12ZCTRochester Electronics |
STANDARD SRAM, 256KX16 |
|
71T75802S166BGGIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
SST39LF800A-55-4C-EKERoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
MR44V100AMAZAATLROHM Semiconductor |
IC FRAM 1MBIT I2C 3.4MHZ 8SOP |
|
CAT28F512HI-90Rochester Electronics |
IC FLASH 512KBIT PARALLEL 32TSOP |
|
S25FL256SAGMFAG11Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
71256SA20TPGRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28DIP |
|
UPD44164182BF5-E40-EQ3Rochester Electronics |
DDR SRAM, 1MX18, 0.45NS |
|
24AA52T-I/MCRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DFN |
|
MR25H40DFREverspin Technologies, Inc. |
IC RAM 4MBIT SPI 40MHZ 8DFN |
|
25LC512T-I/MFRoving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 20MHZ 8DFN |
|
70T651S10BC8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |