类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 18Mb (1M x 18) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.5 ns |
电压 - 电源: | 2.375V ~ 2.625V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SST39LF800A-55-4C-EKERoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
MR44V100AMAZAATLROHM Semiconductor |
IC FRAM 1MBIT I2C 3.4MHZ 8SOP |
|
CAT28F512HI-90Rochester Electronics |
IC FLASH 512KBIT PARALLEL 32TSOP |
|
S25FL256SAGMFAG11Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
71256SA20TPGRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28DIP |
|
UPD44164182BF5-E40-EQ3Rochester Electronics |
DDR SRAM, 1MX18, 0.45NS |
|
24AA52T-I/MCRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DFN |
|
MR25H40DFREverspin Technologies, Inc. |
IC RAM 4MBIT SPI 40MHZ 8DFN |
|
25LC512T-I/MFRoving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 20MHZ 8DFN |
|
70T651S10BC8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
93AA56B-I/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8TSSOP |
|
CY7C293AL-35WCRochester Electronics |
UVPROM, 2KX8, 35NS, CMOS |
|
W9812G6JB-6 TRWinbond Electronics Corporation |
IC DRAM 128MBIT PARALLEL 54TFBGA |