English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR2 |
| 内存大小: | 512Mb (32M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 400 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | - |
| 电压 - 电源: | 1.14V ~ 1.95V |
| 工作温度: | -25°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 134-VFBGA |
| 供应商设备包: | 134-VFBGA (10x11.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
R1LP5256ESP-5SR#S0Rochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOP |
|
7132LA20JGRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
MT58L128L36P1T-7.5ITRochester Electronics |
CACHE SRAM, 128KX36, 4NS PQFP100 |
|
25LC040A-E/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ 8MSOP |
|
CY7C2568KV18-400BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
DS1230Y-70IND+Maxim Integrated |
IC NVSRAM 256KBIT PAR 28EDIP |
|
AT25020A-10TQ-2.7Rochester Electronics |
EEPROM, 256X8, SERIAL, CMOS |
|
CY62167EV30LL-45ZXATCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
24LC02BT-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8TDFN |
|
FM93C06LM8XRochester Electronics |
EEPROM, 16X16, SERIAL, CMOS |
|
CY7C1024AV33-10ACRochester Electronics |
STANDARD SRAM, 128KX24 |
|
IS45S16320D-6CTLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
71V67703S85PFGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
