类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N and P-Channel Complementary |
场效应管特征: | Standard |
漏源电压 (vdss): | 10.6V |
电流 - 连续漏极 (id) @ 25°c: | - |
rds on (max) @ id, vgs: | 1800Ohm @ 5V |
vgs(th) (最大值) @ id: | 1V @ 1µA |
栅极电荷 (qg) (max) @ vgs: | - |
输入电容 (ciss) (max) @ vds: | 3pF @ 5V |
功率 - 最大值: | 500mW |
工作温度: | 0°C ~ 70°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
供应商设备包: | 8-MSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF7901D1TRIR (Infineon Technologies) |
MOSFET 2N-CH 30V 6.2A 8SOIC |
|
SI4226DY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 25V 8A 8SOIC |
|
IRF8910GPBFIR (Infineon Technologies) |
MOSFET 2N-CH 20V 10A 8-SO |
|
SSM6N48FU,RF(DToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 30V 0.1A |
|
IRF5810TRPBFIR (Infineon Technologies) |
MOSFET 2P-CH 20V 2.9A 6-TSOP |
|
SI4670DY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 25V 8A 8SOIC |
|
ZXMN6A11DN8TCZetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 2.5A 8SOIC |
|
ZXMD65P02N8TCZetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 20V 4A 8SOIC |
|
BSO615NIR (Infineon Technologies) |
MOSFET 2N-CH 60V 2.6A 8SOIC |
|
SI4622DY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 8A 8-SOIC |
|
AO8814#AAlpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 20V 7.5A 8TSSOP |
|
BUK9MJT-55PRF,518Nexperia |
MOSFET 2N-CH 55V 20SOIC |
|
TPC8212-H(TE12LQ,MToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 30V 6A SOP8 |