类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Standard |
漏源电压 (vdss): | 25V |
电流 - 连续漏极 (id) @ 25°c: | 8A |
rds on (max) @ id, vgs: | 19.5mOhm @ 7A, 4.5V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 36nC @ 10V |
输入电容 (ciss) (max) @ vds: | 1255pF @ 15V |
功率 - 最大值: | 3.2W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF8910GPBFIR (Infineon Technologies) |
MOSFET 2N-CH 20V 10A 8-SO |
|
SSM6N48FU,RF(DToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 30V 0.1A |
|
IRF5810TRPBFIR (Infineon Technologies) |
MOSFET 2P-CH 20V 2.9A 6-TSOP |
|
SI4670DY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 25V 8A 8SOIC |
|
ZXMN6A11DN8TCZetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 2.5A 8SOIC |
|
ZXMD65P02N8TCZetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 20V 4A 8SOIC |
|
BSO615NIR (Infineon Technologies) |
MOSFET 2N-CH 60V 2.6A 8SOIC |
|
SI4622DY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 8A 8-SOIC |
|
AO8814#AAlpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 20V 7.5A 8TSSOP |
|
BUK9MJT-55PRF,518Nexperia |
MOSFET 2N-CH 55V 20SOIC |
|
TPC8212-H(TE12LQ,MToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 30V 6A SOP8 |
|
SI1917EDH-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 12V 1A SC70-6 |
|
AO4614BL_201Alpha and Omega Semiconductor, Inc. |
MOSFET N/P-CH 40V 8SOIC |